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  16k x 16 reprogrammable prom cy7c276 cypress semiconductor corporation ? 3901 north first street  san jose  ca 95134  408-943-2600 document #: 38-04004 rev. ** revised march 4, 2002 76 features ? 0.8-micron cmos for optimum speed/power  high speed (for commercial and military) ? 25-ns access time 16-bit-wide words  three programmable chip selects  programmable output enable  44-pin plcc and 44-pin lcc packages  100% reprogrammable in windowed packages  ttl-compatible i/o  capable of withstanding greater than 2001v static dis- charge functional description the cy7c276 is a high-performance 16k-word by 16-bit cmos prom. it is available in a 44-pin plcc/clcc and a 44-pin lcc packages, and is 100% reprogrammable in win- dowed packages. the memory cells utilize proven eprom floating gate technology and word-wide programming algo- rithms. the cy7c276 allows the user to independently program the polarity of each chip select (cs 2 ? cs 0 ). this provides on-chip decoding of up to eight banks of prom. the polarity of the asynchronous output enable pin (oe) is also programmable. in order to read the cy7c276, all three chip selects must be active and oe must be asserted. the contents of the memory location addressed by the address lines (a 13 ? a 0 ) will become available on the output lines (d 15 ? d 0 ). the data will remain on the outputs until the address changes or the outputs are dis- abled. 16k x 16 programmable array cs decode d 15 d 14 d 13 d 12 d 11 d 10 d 9 d 8 d 7 d 6 d 5 d 4 d 3 d 2 d 1 d 0 lcc/plcc/clcc top view a 13 a 12 a 10 a 9 a 8 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 a 11 cs 0 cs 1 cs 2 oe 1 7 8 9 10 11 12 13 14 15 16 17 39 38 37 36 35 34 33 32 31 30 29 18 19 20 21 22 23 24 25 26 27 28 6 5 4 3 2 4443424140 a 13 a 12 a 11 a 10 a 9 v ss v ss a 8 a 7 a 6 a 5 d 12 d 11 d 10 d 9 d 8 v ss v cc d 7 d 6 d 5 d 4 14 a 0 oe a 1 a 2 a 3 a 4 d 0 d 1 d 2 d 3 d d 13 d 15 v v ss v cc cs 2 cs 1 cs 0 v ss ss v cc v ss logic block diagram pin configuration
cy7c276 document #: 38-04004 rev. ** page 2 of 10 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature ................................. ? 65 c to+150 c ambient temperature with power applied............................................. ? 55 c to+125 c supply voltage to ground potential ................ ? 0.5v to+7.0v dc voltage applied to outputs in high z state ................................................ ? 0.5v to+7.0v dc input voltage............................................ ? 3.0v to +7.0v dc program voltage .....................................................13.0v uv erasure ...................................................7258 wsec/cm 2 static discharge voltage ........................................... >2001v (per mil-std-883, method 3015) latch-up current..................................................... >200 ma selection guide cy7c276-25 cy7c276-30 cy7c276-35 maximum access time (ns) 25 30 35 maximum operating current (ma) commercial 175 175 175 military 200 200 200 operating range range ambient temperature v cc commercial 0 c to +70 c 5v 10% industrial [1] ? 40 c to +85 c 5v 10% military [2] ? 55 c to +125 c 5v 10% electrical characteristics [3, 4] parameter description cy7c276-25 cy7c276-30 cy7c276-35 unit test conditions min. max. v oh output high voltage v cc = min., i oh = ? 2.0 ma 2.4 v v ol output low voltage v cc = min., i ol = 8.0 ma (6.0 ma mil) 0.4 v v ih input high level guaranteed input logical high voltage for all inputs 2.0 v cc v v il input low level guaranteed input logical low voltage for all inputs ? 3.0 0.8 v i ix input leakage current gnd < v in < v cc ? 10 +10 a v cd input clamp diode voltage note 3 a i oz output leakage current v cc = max., v ol < v out < v oh , output disabled ? 40 +40 a i os output short circuit current v cc = max., v out = 0.0v [5] ? 20 ? 90 ma i cc power supply current v cc = max., i out = 0.0 ma com ? l 175 ma military 200 ma capacitance [3] parameter description test conditions max. unit c in input capacitance t a = 25 c, f = 1 mhz, v cc = 5.0v 10 pf c out output capacitance 10 pf note: 1. contact a cypress representative for industrial temperature range specifications. 2. t a is the ? instant on ? case temperature 3. see introduction to cmos proms in this data book for general information on testing. 4. see the last page of this specification for group a subgroup testing information. 5. for test purposes, not more than one output at a time should be shorted. short circuit test duration should not exceed 30 sec onds.
cy7c276 document #: 38-04004 rev. ** page 3 of 10 erasure characteristics the recommended dose of ultraviolet light for erasure is a wavelength of 2537 angstroms for a minimum dose (uv inten- sity multiplied by exposure time) of 25 wsec/cm2. for an ultra- violet lamp with a 12 mw/cm 2 power rating the exposure time would be approximately 35 minutes. the 7c276 needs to be within 1 inch of the lamp during erasure. permanent damage may result if the eprom is exposed to high-intensity uv light for an extended period of time. 7258 wsec/cm 2 is the recom- mended maximum dosage. wavelengths of light less than 4000 angstroms begin to erase the 7c276 in the windowed package. for this reason, an opaque label should be placed over the window if the eprom is exposed to sunlight or fluorescent lighting for extended pe- riods of time. ac test loads and waveforms 90% 10% 3.0v gnd 90% 10% all input pulses 5v output 50 pf including jig and scope 5v output 5 pf including jig and scope (a) normalload (b) high z load < 3ns < 3 ns output 2.0v (1.9v mil) r1 500 ? (658 ? mil) r1 500 ? (658 ? mil) r2 333 ? (403 ? mil) r2 333 ? (403 ? mil) equivalent to: th venin equivalent 200 ? (250 ? mil) switching characteristics over the operating range [3,4] cy7c276-25 cy7c276-30 cy7c276-35 parameter description min. max. min. max. min. max. unit t aa address to output data valid 25 30 35 ns t csov cs active to output valid 13 15 18 ns t csoz cs inactive to high z output 13 15 18 ns t oev oe active to output valid 11 12 15 ns t oez oe inactive to high z output 11 12 15 ns
cy7c276 document #: 38-04004 rev. ** page 4 of 10 architecture configuration bits the cy7c276 has four user-programmable options in addition to the reprogrammable data array. for detailed programming information contact your local cypress representative. the programmable options determine the active polarity for the three chip selects (cs2 - cs0) and oe. when these con- trol bits are programmed with a 0 the inputs are active low. when these control bits are programmed with a 1 the inputs are active high. programming information programming support is available from cypress as well as from a number of third-party software vendors. for detailed programming information, including a listing of software pack- ages, please see the prom programming information located at the end of this section. programming algorithms can be ob- tained from any cypress representative. switching waveforms note: 6. cs 2 ? cs 0 , oe assumed active. t oev t csov t csoz read operation timing diagram chip select and output enable timing diagrams addr a c276 ? 6 c276 ? 7 addr b data a data b t aa t aa inactive active t oez inactive a 13 ? a 0 cs 2 ? cs 0 oe active high d 15 ? d 0 a 13 ? a 0 d 15 ? d 0 valid valid high z [6]
cy7c276 document #: 38-04004 rev. ** page 5 of 10 control word (4000h) d15 d0 x cs2 cs1 cs0 x x x x x x x x 1 x x oe table 1. control word for architecture configuration control word control option bit programmed level function oe d 0 0=default 1=programmed oe active low oe active high cs 0 d 12 0=default 1=programmed cs 0 active low cs 0 active high cs 1 d 13 0=default 1=programmed cs 1 active low cs 1 active high cs 2 d 14 0=default 1=programmed cs 2 active low cs 2 active high bit map programmer address (hex) ram data 0000 data . . . . . . 3fff data 4000 control word table 2. program mode table mode v pp pgm vfy d 0 ? d 15 program inhibit v pp v ihp v ihp high z program enable v pp v ilp v ihp data program verify v pp v ihp v ilp data table 3. configuration mode table mode v pp pgm vfy a 2 d 0 ? d 15 program inhibit v pp v ihp v ihp v pp high z program control word v pp v ilp v ihp v pp control word verify control word v pp v ihp v ilp v pp control word figure 1. programming pinout cy7c276 1 7 8 9 10 11 12 13 14 15 16 17 39 38 37 36 35 34 33 32 31 30 29 18 19 20 21 22 23 24 25 26 27 28 65432 44434241 40 a 13 a 12 a 11 a 10 a 9 v ss v ss a 8 a 7 a 6 a 5 d 12 d 11 d 10 d 9 d 8 v ss v cc d 7 d 6 d 5 d 4 14 a 0 oe a 1 a 2 a 3 a 4 d 0 d 1 d 2 d 3 d d 13 d 15 v ss v cc pgm vfy cs 0 v ss v pp v ss v ss
cy7c276 document #: 38-04004 rev. ** page 6 of 10 typical dc and ac characteristics 1.1 1.2 0.9 0.8 0 100 200 300 400 6 1.4 1.2 1.2 1.1 1.0 0.9 4.0 4.5 5.0 5.5 6.0 normalized access time access time (ns) normalized i cc vs. t cka cycle normalized i cc vs. output voltage output voltage (v) supplyvoltage(v) normalized t cka vs. supply voltage 0.7 1.0 1.4 1.2 1.0 0.8 ? 55 125 normalized access time ambient temperature ( c) normalized t cka vs. temperature 30 35 25 15 10 5 0 200 400 600 0 20 output load (pf) t oev change vs. output loading 1.0 0.8 0.6 normalized i (ma) cc normalized i (ma) cc t a =90 c 0.6 25 20 15 10 5 0200 delta access time (ns) output load (pf) 25 0 800 c276 ? 9 0.6 0.5 t a =25 c v cc =5.5v 500 5.5 5 4.5 4 t a =25 c f=f max v cc =4.5v 0.9 400 600 800 1000 t a =25 c v cc =4.5v t cka change vs. output loading 0.95 0.90 0.85 ? 55 125 ambient temperature ( c) normalized i cc vs. ambient temperature 25 v cc =5.6v 1.0 normalized i (ma) cc 1.1 1.1 1.2 1.0 0 0.9 temperature( c) normalized t oev vs. temperature v cc =4.5v normalized t (ns) oev ? 55 125 25 v cc =4.5v t a =25 c 1000 delta t (ns) oev 1.05
cy7c276 document #: 38-04004 rev. ** page 7 of 10 military specifications group a subgroup testing ordering information [7] speed (ns) ordering code package name package type operating range 25 cy7c276-25hc h67 44-pin windowed leaded chip carrier commercial cy7c276-25jc j67 44-lead plastic leaded chip carrier cy7c276-25hmb h67 44-pin windowed leaded chip carrier military cy7c276-25qmb q67 44-pin windowed leadless chip carrier 30 cy7c276-30hc h67 44-pin windowed leaded chip carrier commercial cy7c276-30jc j67 44-lead plastic leaded chip carrier CY7C276-30HMB h67 44-pin windowed leaded chip carrier military cy7c276-30qmb q67 44-pin windowed leadless chip carrier 35 cy7c276-35hc h67 44-pin windowed leaded chip carrier commercial cy7c276-35jc j67 44-lead plastic leaded chip carrier cy7c276-35hmb h67 44-pin windowed leaded chip carrier military cy7c276-35qmb q67 44-pin windowed leadless chip carrier note: 7. most of the above products are available in industrial temperature range. contact a cypress representative for specifications and product availability. dc characteristics parameter subgroups v oh 1, 2, 3 v ol 1, 2, 3 v ih 1, 2, 3 v il 1, 2, 3 i ix 1, 2, 3 i oz 1, 2, 3 i cc 1, 2, 3 switching characteristics parameter subgroups t aa 7, 8, 9, 10, 11 t csov 7, 8, 9, 10, 11 t oev 7, 8, 9, 10, 11
cy7c276 document #: 38-04004 rev. ** page 8 of 10 package diagrams 44-pin windowed leaded chip carrier h67 51-80079
cy7c276 document #: 38-04004 rev. ** page 9 of 10 ? cypress semiconductor corporation, 2002. the information contained herein is subject to change without notice. cypress semico nductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress semiconductor product. nor does it convey or imply any license unde r patent or other rights. cypress semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected t o result in significant injury to the user. the inclusion of cypress semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in do i ng so indemnifies cypress semiconductor against all charges. package diagrams (continued) 44-lead plastic leaded chip carrier j67 51-85003-a 44-pin windowed leadless chip carrier q67 mil ? std ? 1835 c ? 5 51-80104
cy7c276 document #: 38-04004 rev. ** page 10 of 10 document title: cy7c276 16k x 16 programmable prom document number: 38-04004 rev. ecn no. issue date orig. of change description of change ** 113860 03/06/02 dsg change from spec number: 38-00183 to 38-04004


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